Methods for Controlling Plasma Constituent Flux and Deposition During Semiconductor Fabrication and Apparatus for Implementing the Same

ABSTRACT

A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.

CLAIM OF PRIORITY

This application is a divisional application under 35 U.S.C. 121 of U.S.patent application Ser. No. 12/882,560, filed on Sep. 15, 2010, which isincorporated herein by reference in its entirety.

BACKGROUND

In semiconductor fabrication, a plasma etching process can be used totransfer a photoresist mask pattern of a portion of a circuit onto oneor more materials (conductors or insulators) on a semiconductor wafer.In the plasma etching process, the plasma acts to etch away materialsexposed in the open areas of the photoresist mask pattern, i.e., in theareas that are not protected by the photoresist mask. The etchingreaction is accomplished by chemically active and electrically chargedspecies (ions) present in the plasma. The plasma is generated from areactant mixture within a plasma chamber. In some applications, anelectric field can be used to accelerate ions present in the plasmatowards the wafer, thereby providing directionality to the etching ofmaterials from the wafer. When the etching process is completed, thephotoresist mask material is removed from the wafer.

During the plasma etching process, the photoresist material can beeroded or altered by the etching chemistry and/or etching byproductmaterials. Too much erosion of the photoresist material can causedistortion in the photoresist mask pattern and corresponding etchingdistortion in the wafer. Also, without proper control, the etchingbyproducts can reduce the size of the openings of the photoresist maskpattern, thereby preventing the etching constituents of the plasma fromreaching the materials to be etched. Moreover, the above-identifiedissues become even more problematic in fabrication of advanced devicesthat have high aspect ratio features and very small dimensions. It is inthis context that embodiments of the present invention arise.

SUMMARY

In one embodiment, a method is disclosed for defining a plasma processto be performed on a substrate. The method includes determining atime-dependent substrate temperature to be applied during the plasmaprocess. The time-dependent substrate temperature at any given time isdetermined based on control of a sticking coefficient of a plasmaconstituent at the given time. The method also includes determining atime-dependent temperature differential between an upper plasma boundaryand a substrate to be applied during the plasma process. The substrateserves as a lower plasma boundary. The time-dependent temperaturedifferential at any given time is determined based on control of a fluxof the plasma constituent directed toward the substrate at the giventime. The method further includes storing the determined time-dependentsubstrate temperature and time-dependent temperature differential in adigital format suitable for use by a temperature control device definedand connected to direct temperature control of the upper plasma boundaryand the substrate during the plasma process.

In another embodiment, a method is disclosed for operating a plasmaprocessing chamber. The method includes obtaining a time-dependentsubstrate temperature to be applied during a plasma process. Thetime-dependent substrate temperature at any given time is correlated tocontrol of a sticking coefficient of a plasma constituent at the giventime. The method also includes obtaining a time-dependent temperaturedifferential between an upper plasma boundary and a substrate to beapplied during the plasma process. The substrate serves as a lowerplasma boundary. The time-dependent temperature differential at anygiven time is correlated to control of a flux of the plasma constituenttoward the substrate at the given time. The method also includes holdingthe substrate on a top surface of a substrate holder. The substrateholder is disposed at a location below and spaced apart from an upperelectrode assembly which defines the upper plasma boundary. The methodfurther includes controlling a temperature of the substrate holderduring the plasma process so as to control a temperature of thesubstrate in accordance with the time-dependent substrate temperature.Also, the method includes controlling a temperature of the upperelectrode assembly during the plasma process so as to comply with thetime-dependent temperature differential between the upper plasmaboundary and the substrate.

In another embodiment, a system for plasma processing of a substrate isdisclosed. The system includes a plasma processing chamber. A substrateholder is disposed within the plasma processing chamber and is definedto hold a substrate. The substrate holder includes one or moretemperature control devices. The system also includes an upper electrodeassembly disposed within the plasma processing chamber above and spacedapart from the substrate holder. The upper electrode assembly includesone or more temperature control devices. The system further includes atemperature control module defined to control the one or moretemperature control devices of the substrate holder to maintain a targetsubstrate temperature. The temperature control module is further definedto control the one or more temperature control devices of the upperelectrode assembly to maintain a target temperature differential betweenthe substrate and the upper electrode assembly.

Other aspects and advantages of the invention will become apparent fromthe following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the principles ofthe invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A shows a photoresist mask material disposed over a dielectricmaterial as part of a substrate;

FIG. 1B also shows a thinning of the mask material through the etchingprocess;

FIG. 1C shows the etched region of the dielectric material followingremoval of the etching resistant coating and the remaining maskmaterial;

FIG. 2A demonstrates how too much polymer coating can pinch off theetched opening and prematurely shutdown the etching process within theetched opening;

FIG. 2B demonstrates how not enough polymer coating deposition can causepremature removal of the mask material and widening of the etchedfeature;

FIG. 3A shows a plasma processing chamber for use in performing etchingoperations, in accordance with one embodiment of the present invention;

FIG. 3B shows an enlarged area X of FIG. 3A, in accordance with oneembodiment of the present invention;

FIG. 3C shows a polymer deposition trend chart for a dielectric etchingplasma chemistry that uses C₄F₆, O₂, and inert gas (Ar), in accordancewith one embodiment of the present invention;

FIG. 3D shows an example of temperature differential (ΔT) versus etchingprocess time, in accordance with one embodiment of the presentinvention;

FIG. 3E shows example temperature profiles of the upper electrodeT_(upper electrode) and substrate T_(substrate) during a plasma etchingprocess, in accordance with one embodiment of the present invention;

FIG. 4A shows an example plasma processing chamber, in accordance withone embodiment of the present invention;

FIG. 4B shows a top view of the multiple concentric temperature controlzones of the upper electrode assembly and substrate holder in theexample of FIG. 4A, in accordance with one embodiment of the presentinvention;

FIG. 5 shows a system for plasma processing of a substrate, based on theexample plasma processing chamber of FIG. 4A, in accordance with oneembodiment of the present invention;

FIG. 6 shows a flowchart of a method for defining a plasma process to beperformed on a substrate, in accordance with one embodiment of thepresent invention; and

FIG. 7 shows a flowchart of a method for operating a plasma processingchamber, in accordance with one embodiment of the present invention.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentinvention.

In semiconductor fabrication, a plasma etching process generally uses apatterned mask material to protect portions of the substrate that arenot to be etched. An objective in plasma etching is to formulate theplasma so as to optimize etching selectivity of the exposed materials onthe substrate, rather than the mask material. However, it is generallyinevitable that a plasma will etch the mask material to some extent.Also, it often happens that a material to be etched on the substratewill require a plasma formulation that also has an increased capabilityof etching the mask material. Therefore, a challenge in plasma etchingis to manage etching of the mask material to ensure that the maskpattern is accurately transferred to the substrate and to ensure thatthe mask material provides adequate protection of the substrate throughcompletion of the etching process. Additionally, etching byproductmaterials need to be controlled to ensure that they do not interferewith the etching process.

In some plasma etching processes, the gas mixture from which the plasmais formed may include a passivation gas. This passivation gas can bedefined to selectively reduce the etching damage and erosion of the maskmaterial relative to the materials to be etched. In one embodiment, thepassivation gas generates an etching resistant coating on the surface ofthe mask material, which acts as a barrier to slow down the etching ofthe mask material. The etching resistant coating associated with thepassivation gas can also extend to cover vertical surfaces within etchedregions, so as to reduce erosion of the vertical surfaces and associatedundercutting of upper features. In the presence of the etching resistantcoating provided by the passivation gas, vertically biased etching canbe used more aggressively to advance etching in the directionperpendicular to the substrate. Therefore, use of a passivation gas inthe etching plasma mixture can be useful for mask protection duringanisotropic etching processes, particularly those that use high energydirectional ion bombardment.

In one embodiment, the reactive gas mixture from which the plasma isformed includes etching gases and a polymer forming gas that serves as apassivation gas. In the plasma, the etching gases form highly reactivespecies, which serve to etch the exposed materials on the substrate,with inadvertent etching the mask material also. Etching reactions occuron both the vertical and lateral surfaces on the substrate, whichresults in isotropic etching profiles. The presence of the polymerforming gas in the plasma and the corresponding etching resistantcoating, as deposited on the surfaces of the etched structures and maskmaterial, serves to enhance both etching selectivity to appropriatematerials and etching anisotropy in the presence of electrical bias.

FIGS. 1A-C show an exemplary process sequence of forming a feature (orstructure), in accordance with one embodiment of the present invention.FIG. 1A shows a photoresist mask material 104 disposed over a dielectricmaterial 108 as part of a substrate. The mask material 104 forms apattern that includes an open area 112. FIG. 1B shows the dielectricmaterial 108 etched within the opening 112. FIG. 1B also shows athinning of the mask material 104 through the etching process. Also,during the etching process, the mask material 104 and the etched regionwithin the dielectric material 108 are covered by a coating of etchingresistant material 103, e.g., polymer coating. FIG. 1C shows the etchedregion of the dielectric material 108 following removal of the etchingresistant coating 103 and the remaining mask material 104.

During the etching process, the mask materials can be eroded and/ordamaged as the etching proceeds through the materials targeted foretching. Some of the mask material erosion/damage may be transferred tothe underlying materials leaving undesirable pattern distortions such asstriation, CD (critical dimension) enlargement, faceting, etc. As shownin FIG. 1C, the finished etched feature within the dielectric material108 is defined by a width W and a depth D. The aspect ratio (AR) of theetched feature is defined by the ratio of the feature depth to thefeature width (D/W). In advanced integrated circuit devicemanufacturing, the width of an etched feature can be as small as 0.1micron (micrometer) or less, and the depth of the etched feature can be3 micron or more, thereby causing the etched feature to have an aspectratio of 50 to 60, or even higher. By way of example, high aspect ratiofeature etching can occur in fabrication of contact holes, via holes,trenches, memory cell structures, among many others.

When etching features with small dimension and high aspect ratio, if toomuch of the etching resistant coating, e.g., polymer coating, isdeposited on the mask material and on the sidewalls within the etchedfeature, the etching resistant coating can hinder the advancement of theetching front and stop the etching of the target material that is to beetched. FIG. 2A demonstrates how too much polymer coating can pinch offthe etched opening and prematurely shutdown the etching process withinthe etched opening. In FIG. 2A, a patterned mask material 204 isdisposed over a target material (material to be etched, e.g., dielectricmaterial). The patterned mask material 204 includes an opening 212through which the target material is exposed to the plasma andcorrespondingly etched. During the plasma etching process, an etchingresistant coating 203, such as a polymer coating, is deposited on themask material 204 and on the sidewalls of the etched region. FIG. 2Aillustrates that when too much of the etching resistant coating 203builds up, the etching resistant coating 203 pinches together and closesoff the etched region from further exposure to the plasma, therebyeffective stopping the etching process in the opening 212.

Also, if not enough of the etching resistant coating, e.g., polymercoating, is deposited on the mask material and on the sidewalls withinthe etched feature, the mask material and/or sidewalls of the etchedfeature can be etched too quickly before a desired depth of the etchedfeature is obtained, thereby causing deformation and/or widening of theetched feature. FIG. 2B demonstrates how not enough polymer coatingdeposition can cause premature removal of the mask material and wideningof the etched feature. In FIG. 2B, a patterned mask material 204′ isdisposed over the target material 208, and includes an opening 212′through which the target material is exposed to the plasma andcorrespondingly etched. Also, an etching resistant coating 203′, such asa polymer coating, is deposited on the mask material 204′. FIG. 2Billustrates that when not enough of the etching resistant coating 203 isdeposited, the mask material can be thinned and eroded near the opening212′, and the sidewalls of the etched feature can be etched too much,resulting in an adverse widening of the opening 212′. For advanceddevice manufacturing, maintaining the small etched feature dimensionsand achieving the etch depth are both important. Therefore, it isnecessary to manage the amount and distribution of the etching resistantcoating, e.g., polymer coating, deposited during the plasma etchingprocess.

FIG. 3A shows a plasma processing chamber 300 for use in performingetching operations, in accordance with one embodiment of the presentinvention. In the chamber 300, a substrate 301 sits on a substratesupport 302, which could be an electrode or an electrostatic chuck(ESC). An upper electrode 303 is positioned above and spaced apart fromthe substrate support 302. FIG. 3B shows an enlarged area X of FIG. 3A,in accordance with one embodiment of the present invention. The enlargedarea X includes a portion of the upper electrode 303, and a portion ofthe substrate 301. The portion of the substrate 301 includes a targetmaterial 310 to be etched and a patterned mask material 320 disposedover the target material 310. The patterned mask material 320 includesan opening 305 through which the target material 310 is exposed to theplasma during the etching process. Exposure of the target material 310to the plasma causes an etched feature to be formed in the targetmaterial 310 where the opening 305 exists.

During the etching process, an etching resistant material 330, such as apolymer material, is deposited from the plasma onto the mask material320 and surfaces within the etched feature. The etching resistantmaterial 330 within the plasma has a mass distribution, such that someof the etching resistant material 330 particles have larger mass thanothers. In FIG. 3B, larger mass particles 330A of the etching resistantmaterial 330 are denoted by “+” and smaller mass particles 330B of theetching resistant material 330 are denoted by “−”. During the plasmaetching process, the etching resistant material 330 is subject to athermophoresis effect, in which the larger mass particles 330A movetoward surfaces/regions of lower temperature, and the smaller massparticles 330B move toward surfaces/regions of higher temperature.

In the example of FIG. 3B, a temperature difference exists between theupper electrode 303 and the substrate 301, with the temperature of theupper electrode 303 being higher than the temperature of the substrate301. Therefore, in the example of FIG. 3B, larger mass particles 330A ofthe etching resistant material 330 within the plasma move toward thelower temperature substrate 301, as denoted by the “+” symbols. And,conversely, smaller mass particles 330B of the etching resistantmaterial 330 within the plasma move toward the higher temperature upperelectrode 303, as denoted by the “−” symbols.

In one example embodiment, the temperature difference between the upperelectrode 303 and the substrate 301 may be about 20° C., with the upperelectrode 303 having the higher temperature. However, it should beunderstood, that plasma processes can vary significantly with regard totemperature requirements. Sometimes the upper electrode 303 will have ahigher temperature than the substrate 301, and sometimes the substrate301 will have a higher temperature than the upper electrode 303. Also,the magnitude of temperature difference between the upper electrode 303and the substrate 301, or between any other surfaces within the chamber300, can vary from process-to-process and within a given process. Itshould be appreciated that control of the temperature differential(s)between surfaces to which the plasma is exposed, e.g., between the upperelectrode 303 and the substrate 301, enables control of the spatial massdistribution of the etching resistant material 330 within the plasma.And, by controlling the spatial mass distribution of the etchingresistant material 330 within the plasma, it is possible to control themass distribution of the etching resistant material 330 particles nearthe substrate 301.

FIG. 3C shows a polymer deposition trend chart for a dielectric etchingplasma chemistry that uses C₄F₆, O₂, and inert gas (Ar), in accordancewith one embodiment of the present invention. In the etching plasmachemistry, C₄F₆ is the polymer forming gas. A temperature differential(ΔT) is defined as the temperature difference between the upperelectrode and the substrate, i.e., ΔT=T_(upper electrode)−T_(substrate).The chart of FIG. 3C shows that an increase in ΔT provides more polymerdeposition on the substrate. It should be understood that more than onepolymer forming gas can be used in the etching plasma chemistry.Examples of polymer forming gas include, but are not limited to, CH₃F,CH₂F₂, C₂H₅F, C₃H₇F, C₂H₃F, CH₄, C₂H₄, C₂H₆, C₂H₂, C₃H₈, and SiH₄,Si(CH₃)₄, Si(C₂H₅)₄.

FIG. 3D shows an example of temperature differential (ΔT) versus etchingprocess time, in accordance with one embodiment of the presentinvention. The example of FIG. 3D shows three stages (I, II, and III)during the etching process. Stage I of the etching process involvesinitial etching of the opening. Stage II of the etching process involvesetching deeper into the opening. Stage III of the etching processinvolves over-etching to ensure the opening in the target materialreaches a desired depth and/or exposes a material layer underneath thetarget material being etched. For example, if the target material is adielectric film and the opening is for a contact or a via, the stage IIIover-etching may serve to clear any remaining dielectric film in theopening to ensure that the opening reaches the metal layer underneaththe dielectric layer.

In the example of FIG. 3D, the temperature differential (ΔT) between theupper electrode and the substrate is the largest during stage I of theetching process. In stage I, deposition of larger mass polymer isdesired in order to cover the photoresist mask material so as to reduceloss of photoresist mask material, and also to cover the sidewall of theopening to inhibit lateral etching. By maintaining a higher temperaturedifferential (ΔT) during stage I of the etching process, larger masspolymer particles are distributed near the substrate surface. Duringstage II of the example etching process of FIG. 3D, the etchingconstituents of the plasma need to reach deeper into the etched feature.Thus, during stage II of the etching process, it is necessary to avoidexcessive polymer deposition within the etched feature in order toprevent the deposited polymer from restricting access of the etchingconstituents of the plasma to the etching front at the bottom of theopening 305. By lowering the temperature differential (ΔT) during stageII of the etching process, a more uniform mass distribution of polymerparticles is achieved near the substrate surface. And, during stage IIIof the etching process, additional polymer deposition is not necessary.Therefore, an even lower temperature differential (ΔT) is applied duringstage III to ensure that larger mass polymer does not interfere with theover-etching deep within the etched feature.

Etching resistant materials present within the plasma, such as polymermaterial, generally exists in the form of particles. These particles arecharacterized in part by a sticking coefficient (S_(c)), which isdefined as the number of particles that stick to a surface divided bythe number of particles that contact the surface. Therefore, a highersticking coefficient (S_(c)) of polymer material refers to more stickingof the polymer material on a surface. For polymer material, the stickingcoefficient (S_(c)) is a function of temperature and decreases withincreased temperature. Therefore, an increase in substrate temperaturecorresponds to a decrease in polymer sticking coefficient (S_(c)), i.e.,a less sticky polymer on the substrate.

During the etching process, the temperature of the substrate, e.g.,wafer, is controlled to make sure that polymer material which flows intothe etched region will stick to the sidewalls of the etched regionenough to protect them from lateral etching, which could lead toundercutting. However, the temperature of the substrate is alsocontrolled to avoid excessive build up of polymer material on thesidewalls of the etched region, which could lead to capping of theetched region by the polymer material. For example, during some phasesof the etching process, it is desirable to reduce the amount of polymerthat reaches the bottom of the etched region in order to keep theetching front clear. To accomplish this, the substrate temperature canbe decreased to increase the sticking coefficient (S_(c)) of the polymerso that the polymer sticks to the top of the mask and sidewalls of theetched region before reaching the bottom of the etched region.

It should be understood that the temperature differential (ΔT) betweenthe upper electrode and the substrate controls the amount of etchingresistant material, e.g., polymer, directed toward the substrate, bycontrolling the spatial mass distribution of the etching resistantmaterial within the plasma. Also, it should be understood that thetemperature of the substrate controls the sticking coefficient (S_(c))of the etching resistant material, e.g., polymer, which controls howmuch of the etching resistant material adheres to the substrate.Therefore, deposition of etching resistant material on the substrateduring the plasma etching process can be controlled by controlling bythe temperature of the substrate and the temperature differentialbetween the substrate and other surfaces within the plasma chamber, suchas the upper electrode.

FIG. 3E shows example temperature profiles of the upper electrodeT_(upper electrode) (350) and substrate T_(substrate) (340) during aplasma etching process, in accordance with one embodiment of the presentinvention. The temperature differential (ΔT) between the upper electrodeand the substrate at any point during the etching process is given byT_(upper electrode)−T_(substrate). It should be understood that thetemperature profiles of FIG. 3E are provided for discussion purposes anddo not limit in any way the possible temperature profiles that can beapplied during plasma processing of a substrate. In various embodiments,a plasma process can be represented by essentially any number of processsteps, with each process step potentially including a change insubstrate temperature and/or temperature differential between thesubstrate and upper electrode (or between the substrate and othertemperature controlled surface within the plasma chamber).

The plasma etching process in the example of FIG. 3E includes four steps(or stages) (I, II, III, IV). The temperature of the substrateT_(substrate) (340) increases from step I to step II, stays constantthrough step III, then decreases in step IV. The temperaturedifferential (ΔT) between the substrate and the upper electrode staysthe same from step Ito step II, decreases from step II to step III, andstays the same from step III to step IV. Control of the temperaturedifferential (ΔT) between the substrate and the upper electrodedetermines the magnitude of the polymer flux directed toward thesubstrate. Control of the substrate temperature determines how thepolymer flux near the substrate is managed with regard to its adhesionto the substrate. The methods disclosed herein provide for controllingthe substrate temperature and the temperature differential between thesubstrate and the upper electrode (or other chamber surface) in order tocontrol polymer deposition on the substrate and within etched featuresduring the plasma etching process.

FIG. 4A shows an example plasma processing chamber 400, in accordancewith one embodiment of the present invention. The chamber 400 is definedby a top plate 402, a bottom plate 404, and enclosing walls 406. Aninterior cavity 408 of the chamber 400 is fluidly connected to anexhaust port 410, which is connected to an exhaust pump 412, for removalof gases from the interior cavity 408. Within the chamber 400, an upperelectrode assembly 413 is disposed above and spaced apart from asubstrate holder 401. A peripheral shroud assembly 415 is definedbetween the upper electrode assembly 413 and the substrate holder 401 toform a peripheral boundary of a plasma generation volume 405 between theupper electrode assembly 413 and the substrate holder 401.

In one embodiment, process gases are flowed into the plasma generationvolume 405 through ports 417 in the upper electrode assembly 413, asindicated by arrows 419. Also, in one embodiment, process gases areflowed out of the plasma generation volume 405 through ports 421 in theperipheral shroud assembly 415, as indicated by arrows 423, into theinterior cavity 408 of the chamber 400, from which they can be exhaustedthrough the exhaust port 410. In one embodiment, a pressure control ring425 is disposed proximate to the ports 421, and is movable in thedirection 427 toward and away from the ports 421, to enable throttlingof the fluid flow from the plasma generation volume 405 through theports 421. Also, in some embodiments, the process gas supply ports 417in the upper electrode assembly 413 are defined in multiple concentriczones (e.g., Zones A, B, C in FIG. 4A), with each zone having separateand independent capability with regard to process gas source and flowrate. It should be understood that the process gas supply and flowcontrol configurations depicted in FIG. 4A are provided by way ofexample, and do not limit the principles of the invention disclosedherein.

The upper electrode assembly 413 is connected to a radiofrequency (RF)power source 429 and is defined to transmit RF power to the plasmageneration volume 405. The RF power supplied to the upper electrodeassembly 413 can be single frequency or multiple frequency. The upperelectrode assembly 413 also includes a number of heating elements 431and a number of cooling elements 433. In one embodiment, the heatingelements 431 are defined as resistance heaters. Also, in one embodiment,the cooling elements 433 are defined as channels through which coolingfluid can be flowed. However, it should be understood, that in variousembodiments the heating elements 431 and cooling elements 433 can bedefined in different ways so long as they provide for controlled heatingand cooling, respectively, of the upper electrode assembly 413.

Also, the heating elements 431 and/or cooling elements 433 of the upperelectrode assembly 413 can be defined in multiple concentric zones, witheach zone having separate and independent capability with regard totemperature control. For example, FIG. 4A shows three temperaturecontrol zones (Zones A, B, C) in the upper electrode assembly 413. FIG.4B shows a top view of the concentrically-defined temperature controlzones of the upper electrode assembly 413, in accordance with oneembodiment of the present invention. The upper electrode assembly 413includes a number of temperature measurement devices, such asthermocouples, that provide temperature measurements to a temperaturecontrol module 435. In the case of multiple zoned heating and/or coolingelements, each zone may include one or more temperature measurementdevices connected to the temperature control module 435. The point to beunderstood is that the upper electrode assembly 413 includes effective,rapid, and precise temperature control capability, and accuratetemperature measurement/monitoring capability.

The substrate holder 401 is defined to hold a substrate 403, such as asemiconductor wafer, in exposure to the plasma generation volume 405. Inone embodiment, the substrate holder 401 is connected to aradiofrequency (RF) power supply 411, so as to transmit RF power to theplasma generation volume 405. The RF power supply 411 can be eithersingle frequency or multiple frequency. Also, in another embodiment, thesubstrate holder 401 can be connected to a reference ground potential.In one embodiment, the substrate holder 401 is defined as anelectrostatic chuck (ESC).

The substrate holder 401 includes a number of heating elements 407 and anumber of cooling elements 409. In one embodiment, the heating elements407 are defined as resistance heaters. Also, in one embodiment, thecooling elements 409 are defined as channels through which cooling fluidis flowed. However, it should be understood, that in various embodimentsthe heating elements 407 and cooling elements 409 of the substrateholder 401 can be defined in different ways so long as they provide acontrolled heating and cooling capability, respectively, of thesubstrate holder 401.

Also, the heating elements 407 and/or cooling elements 409 of thesubstrate holder 401 can be defined in multiple concentric zones, witheach zone having separate and independent capability with regard totemperature control. For example, the substrate holder 401 includesthree temperature control zones (Zones A, B, C) that substantially matchthe temperature control zone configuration of the upper electrodeassembly 413. The substrate holder 401 includes a number of temperaturemeasurement devices, such as thermocouples, that provide temperaturemeasurements to the temperature control module 435. In the case ofmultiple zoned heating and/or cooling elements, each zone may includeone or more temperature measurement devices connected to the temperaturecontrol module 435. The point to be understood is that the substrateholder 401 includes effective, rapid, and precise temperature controlcapability, and accurate temperature measurement/monitoring capability.

Additionally, in one embodiment, the peripheral shroud assembly 415 caninclude a number of heating elements 437 and a number of coolingelements 439. In one embodiment, the heating elements 437 are defined asresistance heaters. Also, in one embodiment, the cooling elements 439are defined as channels through which cooling fluid can be flowed.However, it should be understood, that in various embodiments theheating elements 437 and cooling elements 439 can be defined indifferent ways so long as they provide a controlled heating and cooling,respectively, of the peripheral shroud assembly 415. Also, theperipheral shroud assembly 415 includes a number of temperaturemeasurement devices, such as thermocouples, that provide temperaturemeasurements to the temperature control module 435. Again, the point tobe understood is that the peripheral shroud assembly 415 includeseffective, rapid, and precise temperature control capability, andaccurate temperature measurement/monitoring capability.

FIG. 5 shows a system 500 for plasma processing of a substrate, based onthe example plasma processing chamber 400 of FIG. 4A, in accordance withone embodiment of the present invention. The system 500 includes theplasma processing chamber 400, the substrate holder 401 disposed withinthe chamber 400, and the upper electrode assembly 413 disposed withinthe chamber 400 above and spaced apart from the substrate holder 401.The substrate holder 401 includes one or more temperature controldevices 509, such as the heating elements 407 and cooling elements 409,discussed with regard to FIG. 4A. The temperature control devices 509are connected to be controlled by the temperature control module 435.The upper electrode assembly 413 includes one or more temperaturecontrol devices 511, such as the heating elements 431 and coolingelements 433, discussed with regard to FIG. 4A. The temperature controldevices 511 are connected to be controlled by the temperature controlmodule 435.

A first temperature measurement device 501 is disposed to measure atemperature of the substrate holder 401. It should be understood thatthe first temperature measurement device 501 can represent one or moretemperature measurement devices. And, in the case of multipletemperature control zones within the substrate holder 401, the firsttemperature measurement device 501 can represent multiple temperaturemeasurement devices respectively corresponding to the multipletemperature control zones. The first temperature measurement device 501is connected to the temperature control module 435.

A second temperature measurement device 503 is disposed to measure atemperature of the upper electrode assembly 413. It should be understoodthat the second temperature measurement device 503 can represent one ormore temperature measurement devices. And, in the case of multipletemperature control zones within the upper electrode assembly 413, thesecond temperature measurement device 503 can represent multipletemperature measurement devices respectively corresponding to themultiple temperature control zones. The second temperature measurementdevice 503 is connected to the temperature control module 435.

The system 500 also includes a data storage module 505 defined to storetemperature data that can be retrieved and utilized by the temperaturecontrol module 435. In one embodiment, the data storage module 505 is acomputer memory. However, it should be understood that in otherembodiments, the data storage module 505 can be defined in essentiallyany manner so long as the data storage module 505 is capable of storingtemperature data that can be retrieved and utilized by the temperaturecontrol module 435. In one embodiment, the data storage module 505 isdefined within the system 500. In other embodiments, the data storagemodule 505 is defined separate form the system 500, but in datacommunication with the system 505. For example, the temperature controlmodule 435 may be defined to communicate through either a wiredconnection or a wireless connection to a computing device definedoutside of the system 505, with the computing device defined to maintainthe data storage module 505.

The data storage module 505 includes data that defines a time-dependentsubstrate temperature to be applied during a plasma process. Thetime-dependent substrate temperature data is provided as an input fromthe data storage module 505 to the temperature control module 435. Thetime-dependent substrate temperature data at any given time iscorrelated to control of a sticking coefficient (S_(c)) of a plasmaconstituent at the given time. And, the temperature of the substrate iscorrelated to the temperature of the substrate holder 401 measured bythe first temperature measurement device 501.

The data storage module 505 also includes data that defines atime-dependent temperature differential between the upper electrodeassembly and the substrate to be applied during the plasma process. Thetime-dependent substrate temperature differential data is provided as aninput from the data storage module 505 to the temperature control module435. The time-dependent temperature differential data at any given timeis correlated to control of a flux of the plasma constituent toward thesubstrate at the given time.

The temperature control module 435 is defined to control the one or moretemperature control devices 509 of the substrate holder 401 to maintaina target substrate 403 temperature. In one embodiment, the targetsubstrate 403 temperature is a time-dependent substrate temperature tobe applied during a plasma process. The time-dependent substrate 403temperature at any given time is correlated to control of a stickingcoefficient of a plasma constituent at the given time.

The temperature control module 435 is further defined to control the oneor more temperature control devices 511 of the upper electrode assembly413 to maintain a target temperature differential between the substrate403 and the upper electrode assembly 413. In one embodiment, the targettemperature differential between the substrate 403 and the upperelectrode assembly 413 is a time-dependent temperature differentialbetween the substrate 403 and the upper electrode assembly 413 to beapplied during a plasma process. The time-dependent temperaturedifferential at any given time is correlated to control of a flux of aplasma constituent toward the substrate 403 at the given time.

In one embodiment, each of the substrate holder 401 and the upperelectrode assembly 413 is defined to include multiple radiallyconcentric temperature control zones with respective temperature controldevices therein. In this embodiment, the time-dependent substratetemperature data is provided from the data storage module 505 for eachof the multiple radially concentric temperature control zones of thesubstrate holder 401. Also in this embodiment, the time-dependenttemperature differential data between the upper electrode assembly 413and the substrate 401 is provided from the data storage module 505 foreach of the multiple radially concentric temperature control zones ofthe upper electrode assembly 413.

FIG. 6 shows a flowchart of a method for defining a plasma process to beperformed on a substrate, in accordance with one embodiment of thepresent invention. The method includes an operation 601 for determininga time-dependent substrate temperature to be applied during the plasmaprocess. The time-dependent substrate temperature at any given time isdetermined based on control of a sticking coefficient (S_(c)) of aplasma constituent at the given time. The sticking coefficient (S_(c))is a temperature dependent parameter that represents an affinity of theplasma constituent to adhere to the substrate. An increase in substratetemperature corresponds to a reduced sticking coefficient (S_(c))representing a lower affinity of the plasma constituent to adhere to thesubstrate. A decrease in substrate temperature corresponds to anincreased sticking coefficient (S_(c)) representing a higher affinity ofthe plasma constituent to adhere to the substrate. In one embodiment,the plasma constituent is a polymer that is resistant to etchingcapabilities of the plasma process.

The method also includes an operation 603 for determining atime-dependent temperature differential between an upper plasma boundaryand a substrate to be applied during the plasma process. In oneembodiment, the upper plasma boundary is defined by a surface of anupper electrode assembly that is exposed to the plasma. The substrateserves as a lower plasma boundary. The time-dependent temperaturedifferential at any given time is determined based on control of a fluxof the plasma constituent directed toward the substrate at the giventime. The time-dependent temperature differential is defined based on athermophoresis effect on the plasma constituent, whereby higher massportions of the plasma constituent move toward lower temperatureregions, and whereby lower mass portions of the plasma constituent movetoward higher temperature regions. The movement of the plasmaconstituent based on its mass and regional temperatures to which it isexposed controls the flux of the plasma constituent directed toward thesubstrate.

The method further includes an operation 605 for storing the determinedtime-dependent substrate temperature and time-dependent temperaturedifferential in a digital format suitable for use by a temperaturecontrol device. The temperature control device is defined and connectedto direct temperature control of the upper plasma boundary and thesubstrate during the plasma process. Also, in one embodiment, each ofthe time-dependent substrate temperature and the time-dependenttemperature differential between the upper plasma boundary and thesubstrate is defined as a function of radial position extending from acenter of the substrate to a periphery of the substrate.

In one embodiment, the method includes an operation for determining atime-dependent substrate support temperature necessary to achieve thetime-dependent substrate temperature determined in operation 601, by wayof the substrate being held in thermal contact with the substratesupport during the plasma process. This embodiment also includes anoperation for storing the determined time-dependent substrate supporttemperature in a digital format suitable for use by a temperaturecontrol device defined and connected to direct temperature control ofthe substrate support during the plasma process.

In one embodiment, the plasma process includes a high aspect ratiofeature etching process in which a number of high aspect ratio featuresare etched into one or more materials present on the substrate. In thisembodiment, the time-dependent temperature differential between theupper plasma boundary and the substrate is set during the high aspectratio feature etching process to ensure that the flux of the plasmaconstituent toward the substrate provides sufficient amounts ofappropriate masses of the plasma constituent near the substrate andwithin the number of high aspect ratio features. Also, in thisembodiment, the time-dependent substrate temperature is set during thehigh aspect ratio feature etching process to ensure that a sufficientamount of the plasma constituent adheres to the substrate so as to: 1)preserve the mask through completion of the plasma process, 2) ensurethat a sufficient amount of the plasma constituent adheres to sidewallsof the number of high aspect ratio features to protect the sidewallsfrom being adversely undercut, and 3) ensure that the number of highaspect ratio features remain open through completion of the plasmaprocess.

FIG. 7 shows a flowchart of a method for operating a plasma processingchamber, in accordance with one embodiment of the present invention. Themethod includes an operation 701 for obtaining a time-dependentsubstrate temperature to be applied during a plasma process. Thetime-dependent substrate temperature at any given time is correlated tocontrol of a sticking coefficient (S_(c)) of a plasma constituent at thegiven time. In one embodiment, the plasma constituent is a polymer thatis resistant to etching capabilities of the plasma process.

The method also includes an operation 703 for obtaining a time-dependenttemperature differential between an upper plasma boundary and asubstrate to be applied during the plasma process. In one embodiment,the upper plasma boundary is defined by a surface of an upper electrodeassembly that is exposed to the plasma. The substrate serves as a lowerplasma boundary. The time-dependent temperature differential at anygiven time is correlated to control of a flux of the plasma constituenttoward the substrate at the given time.

The method also includes an operation 705 for holding the substrate on atop surface of a substrate holder. The substrate holder is disposed at alocation below and spaced apart from the upper electrode assembly whichdefines the upper plasma boundary. The method also includes an operation707 for controlling a temperature of the substrate holder during theplasma process so as to control a temperature of the substrate inaccordance with the time-dependent substrate temperature. Controllingthe temperature of the substrate holder includes operating a heaterwithin the substrate holder, a chiller within the substrate holder, or acombination thereof.

The method also includes an operation 709 for controlling a temperatureof the upper electrode assembly during the plasma process so as tocomply with the time-dependent temperature differential between theupper plasma boundary and the substrate. Controlling the temperature ofthe upper electrode assembly includes operating a heater within theupper electrode assembly, a chiller within the upper electrode assembly,or a combination thereof.

In one embodiment, each of the substrate holder and the upper electrodeassembly is defined to include multiple radially concentric temperaturecontrol zones. In this embodiment, the time-dependent substratetemperature is obtained for each of the multiple radially concentrictemperature control zones of the substrate holder. Also in thisembodiment, the time-dependent temperature differential between theupper plasma boundary and the substrate is obtained for each of themultiple radially concentric temperature control zones of the upperelectrode assembly.

In one embodiment, the method includes an operation for measuring atemperature of the substrate holder during the plasma process. Asubstrate holder temperature control feedback signal is generated basedon the measured temperature of the substrate holder. And, thetemperature of the substrate holder is controlled based on the substrateholder temperature control feedback signal to maintain the temperatureof the substrate in accordance with the time-dependent substratetemperature.

The method can also include an operation for measuring a temperature ofthe upper electrode assembly during the plasma process. An upperelectrode assembly temperature control feedback signal is generatedbased on the measured temperature of the upper electrode assembly. And,the temperature of the upper electrode assembly is controlled based onthe upper electrode assembly temperature control feedback signal and thesubstrate holder temperature control feedback signal, so as to maintaina temperature difference between the upper electrode assembly and thesubstrate holder in accordance with the time-dependent temperaturedifferential between the upper plasma boundary and the substrate.

Additionally, in one embodiment, the method includes an operation formeasuring a temperature of peripheral components during the plasmaprocess. The peripheral components are located within the plasmaprocessing chamber around a plasma generation volume. A peripheralcomponent temperature control feedback signal is generated based on themeasured temperature of the peripheral components. The temperature ofthe peripheral components is controlled based on the peripheralcomponent temperature control feedback signal to maintain a targettemperature of the peripheral components during the plasma process.Controlling the temperature of the peripheral components includesoperating a heater within the peripheral components, a chiller withinthe peripheral components, or a combination thereof. In variousembodiments, the peripheral components include confinement rings, aperipheral shroud, or a combination thereof. Also, the targettemperature of the peripheral components can be specified as a functionof time during the plasma process.

Example embodiments discussed herein identify a polymer specie withinthe plasma as an etching resistant material whose deposition on thesubstrate is controllable through substrate temperature control andthrough control of differential temperature across the plasma generationvolume. However, it should be understood that the methods disclosedherein can be applied to control deposition of essentially any plasmaspecie that has a differential mass distribution subject tothermophoresis effects, and that is capable of depositing as aprotective layer on the substrate. Also, it should be understood thatthe plasma referenced herein can be generated through either inductivemeans, capacitive means, or a combination thereof. Additionally, themethods disclosed herein can be applied to plasma processing ofessentially any type of substrate, including but not limited tosemiconductor substrates, flat panel displays, solar panels, and thelike.

While this invention has been described in terms of several embodiments,it will be appreciated that those skilled in the art upon reading thepreceding specifications and studying the drawings will realize variousalterations, additions, permutations and equivalents thereof. It istherefore intended that the present invention includes all suchalterations, additions, permutations, and equivalents as fall within thetrue spirit and scope of the invention.

What is claimed is:
 1. A method for defining a plasma process to beperformed on a substrate, comprising: determining a time-dependentsubstrate temperature to be applied during the plasma process, whereinthe time-dependent substrate temperature at any given time is determinedbased on control of a sticking coefficient of a plasma constituent atthe given time; determining a time-dependent temperature differentialbetween an upper plasma boundary and a substrate to be applied duringthe plasma process, wherein the substrate serves as a lower plasmaboundary, and wherein the time-dependent temperature differential at anygiven time is determined based on control of a flux of the plasmaconstituent directed toward the substrate at the given time; and storingthe determined time-dependent substrate temperature and time-dependenttemperature differential in a digital format suitable for use by atemperature control device defined and connected to direct temperaturecontrol of the upper plasma boundary and the substrate during the plasmaprocess.
 2. The method as recited in claim 1, wherein the stickingcoefficient is a temperature dependent parameter that represents anaffinity of the plasma constituent to adhere to the substrate.
 3. Themethod as recited in claim 1, wherein an increase in substratetemperature corresponds to a reduced sticking coefficient representing alower affinity of the plasma constituent to adhere to the substrate, andwherein a decrease in substrate temperature corresponds to an increasedsticking coefficient representing a higher affinity of the plasmaconstituent to adhere to the substrate.
 4. The method as recited inclaim 1, wherein the time-dependent temperature differential is definedbased on a thermophoresis effect on the plasma constituent, wherebyhigher mass portions of the plasma constituent move toward lowertemperature regions, and whereby lower mass portions of the plasmaconstituent move toward higher temperature regions, and wherein themovement of the plasma constituent based on its mass and regionaltemperatures to which it is exposed controls the flux of the plasmaconstituent directed toward the substrate.
 5. The method as recited inclaim 1, wherein the plasma process includes a high aspect ratio featureetching process in which a number of high aspect ratio features areetched into one or more materials present on the substrate.
 6. Themethod as recited in claim 5, wherein the time-dependent temperaturedifferential between the upper plasma boundary and the substrate is setduring the high aspect ratio feature etching process to ensure that theflux of the plasma constituent toward the substrate provides sufficientamounts of appropriate masses of the plasma constituent near thesubstrate and within the number of high aspect ratio features.
 7. Themethod as recited in claim 6, wherein the time-dependent substratetemperature is set during the high aspect ratio feature etching processto ensure that a sufficient amount of the plasma constituent adheres toa mask on the substrate so as to preserve the mask through completion ofthe plasma process, and to ensure that a sufficient amount of the plasmaconstituent adheres to sidewalls of the number of high aspect ratiofeatures to protect the sidewalls from being adversely undercut, and toensure that the number of high aspect ratio features remain open throughcompletion of the plasma process.
 8. The method as recited in claim 1,wherein the plasma constituent is a polymer that is resistant to etchingcapabilities of the plasma process.
 9. The method as recited in claim 1,further comprising: determining a time-dependent substrate supporttemperature necessary to achieve the determined time-dependent substratetemperature, wherein the substrate is held in thermal contact with thesubstrate support during the plasma process; and storing the determinedtime-dependent substrate support temperature in a digital formatsuitable for use by a temperature control device defined and connectedto direct temperature control of the substrate support during the plasmaprocess.
 10. The method as recited in claim 1, wherein each of thetime-dependent substrate temperature and the time-dependent temperaturedifferential between the upper plasma boundary and the substrate isdefined as a function of radial position extending from a center of thesubstrate to a periphery of the substrate.
 11. A system for plasmaprocessing of a substrate, comprising: a plasma processing chamber; asubstrate holder disposed within the plasma processing chamber anddefined to hold a substrate, wherein the substrate holder includes oneor more temperature control devices; an upper electrode assemblydisposed within the plasma processing chamber above and spaced apartfrom the substrate holder, wherein the upper electrode assembly includesone or more temperature control devices; and a temperature controlmodule defined to control the one or more temperature control devices ofthe substrate holder to maintain a target substrate temperature, thetemperature control module further defined to control the one or moretemperature control devices of the upper electrode assembly to maintaina target temperature differential between the substrate and the upperelectrode assembly.
 12. The system as recited in claim 11, wherein thetarget substrate temperature is a time-dependent substrate temperatureto be applied during a plasma process.
 13. The system as recited inclaim 12, wherein the time-dependent substrate temperature at any giventime is correlated to control of a sticking coefficient of a plasmaconstituent at the given time.
 14. The system as recited in claim 11,wherein the target temperature differential between the substrate andthe upper electrode assembly is a time-dependent temperaturedifferential between the substrate and the upper electrode assembly tobe applied during a plasma process.
 15. The system as recited in claim14, wherein the time-dependent temperature differential at any giventime is correlated to control of a flux of a plasma constituent towardthe substrate at the given time.
 16. The system as recited in claim 11,further comprising: a first temperature measurement device disposed tomeasure a temperature of the substrate holder, wherein the temperatureof the substrate holder is correlated to the temperature of thesubstrate held thereon; and a second temperature measurement devicedisposed to measure a temperature of the upper electrode assembly,wherein each of the first and second temperature measurement devices isdefined to convey respective temperature measurement signals to thetemperature control module.
 17. The system as recited in claim 11,wherein the one or more temperature control devices of the substrateholder includes a chiller and a heater embedded within the substrateholder.
 18. The system as recited in claim 11, wherein the one or moretemperature control devices of the upper electrode assembly includes achiller and a heater embedded within the upper electrode assembly. 19.The system as recited in claim 11, wherein each of the substrate holderand the upper electrode assembly is defined to include multiple radiallyconcentric temperature control zones with respective temperature controldevices therein.